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| 2SK3522-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol VDS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Tch Tstg Ratings 500 500 21 84 30 21 400 20 5 2.50 220 +150 -55 to +150 Unit V V A A V A mJ kV/s kV/s W C C Equivalent circuit schematic Drain(D) Gate(G) Source(S) *1 L=1.67mH, Vcc=50V *2 Tch <150C = *4 VDS< 500V *5 VGS=-30V = Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge *3 IF < -ID, -di/dt=50A/s, Vcc < BVDSS, Tch < 150C = = = Electrical characteristics (Tc =25C unless otherwise specified) Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=500V VDS=400V VGS=30V ID=10.5A VGS=0V VGS=0V VDS=0V VGS=10V Tch=25C Tch=125C Min. 500 3.0 Typ. Max. 5.0 25 250 100 0.26 Units V V A nA S pF ID=10.5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=10.5A VGS=10V RGS=10 VCC=300V ID=21A VGS=10V L=1.67mH Tch=25C IF=21A VGS=0V Tch=25C IF=21A VGS=0V -di/dt=100A/s Tch=25C 11 10 0.20 22 2280 3420 320 480 16 24 27 41 37 56 75 113 11 17 54 81 16 24 20 30 0.98 0.7 10.0 ns nC 21 1.50 A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.568 50.0 Units C/W C/W 1 2SK3522-01 Characteristics FUJI POWER MOSFET 260 240 220 200 180 Allowable Power Dissipation PD=f(Tc) Typical Output Characteristics 55 50 45 40 35 ID=f(VDS):80s Pulse test,Tch=25C 20V 10V 8V 7.0V ID [A] 160 PD [W] 140 120 100 80 60 30 25 20 15 6.0V 6.5V 10 40 20 0 0 25 50 75 100 125 150 5 0 0 2 4 6 8 10 12 14 16 18 20 VGS=5.5V Tc [C] VDS [V] Typical Transfer Characteristic ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C 100 100 Typical Transconductance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C 10 10 ID[A] 1 gfs [S] 1 0.1 0 1 2 3 4 5 6 7 8 9 10 0.1 0.1 1 10 100 VGS[V] ID [A] Typical Drain-Source on-state Resistance 0.6 RDS(on)=f(ID):80s Pulse test, Tch=25C 0.7 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=10.5A,VGS=10V 0.5 VGS= 5.5V 0.6 6.0V 6.5V 7.0V 0.5 8V 10V RDS(on) [ ] RDS(on) [ ] 0.4 0.4 max. 0.3 20V 0.3 0.2 0.2 0.1 typ. 0.1 0.0 0 5 10 15 20 25 30 35 40 45 50 55 0.0 -50 -25 0 25 50 75 100 125 150 ID [A] Tch [C] 2 2SK3522-01 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch 7.0 6.5 6.0 5.5 5.0 max. Typical Gate Charge Characteristics VGS=f(Qg):ID=21A, Tch=25C 24 22 20 18 Vcc= 100V Vcc= 250V VGS(th)=f(Tch):VDS=VGS,ID=250A VGS(th) [V] 4.5 16 14 Vcc= 400V 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min. VGS [V] 4.0 12 10 8 6 4 2 0 0 20 40 60 80 100 120 Tch [C] Qg [nC] 10 1 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Forward Characteristics of Reverse Diode 100 IF=f(VSD):80s Pulse test,Tch=25C Ciss 10 0 10 C [nF] 10 -1 Coss IF [A] 1 0.1 0.00 10 -2 Crss 10 -3 10 -1 10 0 10 1 10 2 10 3 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VDS [V] VSD [V] Typical Switching Characteristics vs. ID 10 3 t=f(ID):Vcc=300V, VGS=10V, RG=10 500 450 400 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=50V,I(AV)<=21A 10 2 td(off) 350 300 t [ns] td(on) EAV [mJ] tf 0 1 2 250 200 150 100 50 10 1 tr 10 0 0 -1 10 10 10 10 0 25 50 75 100 125 150 ID [A] starting Tch [C] 3 2SK3522-01 FUJI POWER MOSFET 10 1 Transient Thermal Impedance Zth(ch-c)=f(t):D=t/T,D=0 10 0 Zth(ch-c) [ C/W] o 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] Maximum Avalanche Current Pulsewidth 10 2 IAV=f(tAV):starting Tch=25C. Vcc=50V Avalanche current IAV [A] 10 1 Single Pulse 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 4 |
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